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sense & control data sheet revision 1.0, 2012-07-20 TLE4964-2M high precision automotive hall effect switch
edition 2012-07-20 published by infineon technologies ag 81726 munich, germany ? 2012 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineo n technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of in tellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contai n dangerous substances. for information on the types in question, please contact the neares t infineon technologies office. infineon technologies components may be used in life-s upport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
TLE4964-2M data sheet 3 revision 1.0, 2012-07-20 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossave?, dave?, easypim?, econobridge?, econ odual?, econopim?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, or iga?, primarion?, prim epack?, primestack?, pro-sil?, profet?, rasic?, reversave?, satric?, sieget?, sindrion?, sipmos?, smartlewis?, solid flash?, tempfe t?, thinq!?, trench stop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mifare? of nx p. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave offi ce? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. open wave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of sirius sate llite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of sy mbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. t ektronix? of tektroni x inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilog?, palladium? of cadence design systems, inc. vlynq? of texas instruments inco rporated. vxworks?, wind river? of wind river systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-02-24 revision history page or item subjects (major changes since previous revision) revision 1.0, 2012-07-20
TLE4964-2M table of contents data sheet 4 revision 1.0, 2012-07-20 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.3 target applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.1 general . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.2 pin configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.5 functional block description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.6 default start-up behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3 specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3.1 application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3.2 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.3 operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.4 electrical and magnetic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.5 electro magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.1 package outline pg-sot23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2 packing information pg-sot23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 footprint pg-sc59-3-5 and pg-sot23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.4 pg-sot23-3-15 distance between chip and package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.5 package marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 graphs of the magnetic parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 graphs of the electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 table of contents
TLE4964-2M list of figures data sheet 5 revision 1.0, 2012-07-20 figure 1-1 image of TLE4964-2M in the pg-sot23-3-15 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 figure 2-1 pin configuration and center of sensitive area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 2-2 functional block diagram TLE4964-2M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 figure 2-3 timing diagram TLE4964-2M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 2-4 output signal TLE4964-2M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 2-5 illustration of the start-up behavior of the tle4964-2 m. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 3-1 application circuit 1: with external resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 3-2 application circuit 2: without exte rnal resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 3-3 definition of magnetic field direction pg-sot23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 3-4 emc test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 4-1 pg-sot23-3-15 package outline (all dimensions in mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 4-2 packing of the pg-sot23-3-15 in a tape . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 4-3 footprint pg-sc59-3-5 and pg-sot23-3-15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 4-4 distance between chip and package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 4-5 marking of TLE4964-2M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 5-1 operating point (b op ) of the TLE4964-2M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 5-2 release point (b rp ) of the TLE4964-2M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 5-3 hysteresis (b hys ) of the TLE4964-2M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 6-1 power on time t pon of the TLE4964-2M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 6-2 signal delay time of the TLE4964-2M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 6-3 supply current of the TLE4964-2M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 6-4 supply current of the TLE4964-2M over supply voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 6-5 output current limit of the TLE4964-2M over temperatur e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 6-6 output current limit of the TLE4964-2M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . 22 figure 6-7 output fall time of the TLE4964-2M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 6-8 output fall time of the TLE4964-2M over applied pu ll-up voltage . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 6-9 output rise time of the TLE4964-2M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 6-10 output rise time of the TLE4964-2M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . 23 figure 6-11 output leakage current of the TLE4964-2M over temp erature . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 6-12 saturation voltage of the TLE4964-2M over temperatur e. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 6-13 saturation voltage of the TLE4964-2M over output cu rrent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 6-14 effective noise of the TLE4964-2M thresholds over temperature . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 6-15 output signal jitter of the TLE4964-2M over temperat ure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 list of figures
TLE4964-2M list of tables data sheet 6 revision 1.0, 2012-07-20 table 1-1 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 2-1 pin description pg-sot23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 3-1 absolute maximum rating parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 3-2 esd protection (ta = 25c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 3-3 operating conditions parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 3-4 general electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 3-5 magnetic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 3-6 magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 3-7 electro magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 list of tables
TLE4964-2M product description data sheet 7 revision 1.0, 2012-07-20 1 product description 1.1 overview figure 1-1 image of TLE4964-2M in the pg-sot23-3-15 package 1.2 features ? 3.0 v to 32 v operating supply voltage ? operation from unregulated power supply ? reverse polarity protection (-18 v) ? overvoltage capability up to 42 v without external resistor ? output overcurrent & overtemperature protection ? active error compensation ? high stability of magnetic thresholds ? low jitter (typ. 0.35 s) ? high esd performance ? small smd package pg-sot23-3-15 (TLE4964-2M) 1.3 target applications target applications for the tle496x ha ll switch family are all applications which require a high precision hall switch with an operating temperature range from -40c to 170c. its superior supply voltage range from 3.0 v to 32 v with overvoltage capa bility (e.g. load-dump) up to 42 v without external resist or makes it ideally suited for automotive and industrial applications. the TLE4964-2M is a unipolar switch with a typical operating point b op = 28 mt and a hysteresis of b hys = 5.5 mt. it is ideally suited for various position detection applications. characteristic supply voltage supply current sensitivity interface temperature unipolar hall effect switch 3.0~32 v 1.6 ma low b op :28 mt b rp :22.5 mt open drain output -40c to 170c table 1-1 ordering information product name product type ordering code package TLE4964-2M unipolar hall switch sp000923330 pg-sot23-3-15
TLE4964-2M functional description data sheet 8 revision 1.0, 2012-07-20 2 functional description 2.1 general the TLE4964-2M is an integrated hall effect switch desi gned specifically for highly accurate applications with superior supply voltage c apability, operating temper ature range and temperatur e stability of the magnetic thresholds. 2.2 pin configuration (top view) figure 2-1 pin configuration and center of sensitive area 2.3 pin description table 2-1 pin description pg-sot23-3-15 pin no. symbol function 1 vdd supply voltage 2 q output 3 gnd ground 1 1.45 0.1 0.65 0.1 2 3 sot23 center of sensitive area
TLE4964-2M functional description data sheet 9 revision 1.0, 2012-07-20 2.4 block diagram figure 2-2 functional block diagram TLE4964-2M 2.5 functional block description the chopped hall ic switch comprises a hall probe, bias generator, compensation circ uits, oscillator and output transistor. the bias generator provides currents for the hall probe and the active circui ts. compensation circuits stabilize the temperature behavior and reduce influence of technology variations. the active error compensation (chopping technique) reje cts offsets in the signal path and the influence of mechanical stress to the hall probe caused by molding and soldering processes and other thermal stress in the package. the chopped measurement principle together with the threshold generator and the comparator ensures highly accurate and temperature stable magnetic thresholds. the output transistor has an integrated overcurrent and overtemperature protection. voltage regulator bias and compensation circuits oscillator and sequencer to all subcircuits spinning hall probe chopper multiplexer amplifier demodulator low pass filter comparator with hysteresis control overtemperature & overcurrent protection gnd q v dd reference
TLE4964-2M functional description data sheet 10 revision 1.0, 2012-07-20 figure 2-3 timing diagram TLE4964-2M figure 2-4 output signal TLE4964-2M applied magnetic field 90% 10% v q t f t d t r t d b op b rp v q b op b rp 0 b
TLE4964-2M functional description data sheet 11 revision 1.0, 2012-07-20 2.6 default start-up behavior the magnetic thresholds exhibit a hysteresis b hys =b op -b rp . in case of a power-on with a magnetic field b within hysteresis (b op >b>b rp ) the output of the sensor is set to the pull up voltage level (v q ) per default. after the first crossing of b op or b rp of the magnetic field the internal decision logic is set to the corresponding magnetic input value. v dda is the internal supply voltage which is following the external supply voltage v dd . this means for b > b op the output is switching, for b < b rp and b op >b>b rp the output stays at v q . figure 2-5 illustration of the start-up behavior of the TLE4964-2M t 3v t t v q t b > b op b < b rp b op > b > b rp magnetic field above threshold magnetic field below threshold magnetic field in hysteresis power on ramp the device always applies v q level at start -up independent from the applied magnetic field ! v q v q v dda t pon
TLE4964-2M specification data sheet 12 revision 1.0, 2012-07-20 3 specification 3.1 application circuit the following figure 3-1 shows one option of an application circ uit. as explained above the resistor r s can be left out (see figure 3-2 ). the resistor r q has to be in a dimension to match the applied v s to keep i q limited to the operating ra n
TLE4964-2M specification data sheet 13 revision 1.0, 2012-07-20 3.2 absolute maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. calculation of the dissipated power p dis and junction temperature t j of the chip (sot23 example): e.g for: v dd = 12 v, i s = 2.5 ma, v qsat = 0.5 v, i q = 20 ma power dissipation: p dis = 12 v x 2.5 ma + 0.5 v x 20 ma = 30 mw + 10 mw = 40 mw temperature ? t = r thja x p dis = 300 k/w x 40 mw = 12 k for t a = 150 c: t j = t a + ? t = 150 c + 12 k = 162 c table 3-1 absolute maxi mum rating parameters parameter symbol values unit note / test condition min. typ. max. supply voltage 1) 1) this lifetime statem ent is an anticipation based on an extrapolation of in fineon?s qualification test results. the actual lif etime of a component depends on its form of applic ation and type of use etc. and may de viate from such st atement. the lifetime statement shall in no event extend the agreed warranty period. v dd -18 32 42 v 10h, no external resistor required output voltage v q -0.5 32 v reverse output current i q -70 ma junction temperature 1) t j -40 155 165 175 195 c for 2000h (not additive) for 1000h (not additive) for 168h (not additive) for 3 x 1h (additive) storage temperature t s -40 150 c thermal resistance junction ambient r thja 300 k/w for pg-sot23-3-15 (2s2p) thermal resistance junction lead r thjl 100 k/w for pg-sot23-3-15 table 3-2 esd protection 1) (ta = 25c) 1) characterization of esd is carried out on a sample basis, not subject to production test. parameter symbol values unit note / test condition min. typ. max. esd voltage (hbm) 2) 2) human body model (hbm) tests according to eia/jesd22-a114. v esd -7 7 kv r = 1.5 k ? , c = 100 pf esd voltage (sdm) 3) 3) socket device model (sdm) tests according to eos/esd-ds5.3-1993. -1 1 esd voltage (system level) 4) 4) gun test (2k ? / 330pf or 330 ? / 150pf) according to iso 10605-2008. -15 15 with circuit shown in figure 3-1 & figure 3-2
TLE4964-2M specification data sheet 14 revision 1.0, 2012-07-20 3.3 operating range the following operating conditions must not be exceeded in order to ensure correct operation of the TLE4964-2M. all parameters specified in the followi ng sections refer to these operating conditions unless otherwise mentioned. 3.4 electrical and magnetic characteristics product characteristics involve the spread of values guaranteed within the specified voltage and ambient temperature range. typical characteristics are th e median of the production and correspond to v dd = 12 v and ta = 25c. the below listed specification is valid in combination with the application circuit shown in figure 3-1 and figure 3-2 table 3-3 operating conditions parameters parameter symbol values unit note / test condition min. typ. max. supply voltage v dd 3.0 32 1) 1) latch-up test with factor 1.5 is not covered. please see max ratings also. v output voltage v q -0.3 32 v junction temperature t j -40 170 c output current i q 025ma magnetic signal input frequency 2) 2) for operation at the maximum switching fr equency the magnetic input signal must be 1.4 times higher than for static fields. this is due to the -3db corner frequency of the internal low-pass filter in the signal path. f sw 010khz table 3-4 general electrical characteristics parameter symbol values unit note / test condition min. typ. max. supply current i s 1.11.62.5ma reverse current i sr 0.05 1 ma for v dd = -18 v output saturation voltage v qsat 0.2 0.5 v i q = 20 ma 0.24 0.6 v i q = 25 ma output leakage current i qleak 10 a output current limitation i qlimit 30 56 70 ma internally limited & thermal shutdown output fall time 1) 1) not subject to production test, ve rified by design/characterization. t f 0.17 0.4 1 s1.2k ? / 50 pf, see figure 2-3 output rise time 1) t r 0.4 0.5 1 s1.2k ? / 50 pf, see figure 2-3 output jitter 1)2) 2) output jitter is the 1 value of the output switching distribution. t qj 0.35 1 s for square wave signal with 1 khz delay time 1)3) 3) systematic delay between magnetic threshold reached and output switching. t d 12 15 30 ssee figure 2-3 power-on time 1)4) 4) time from applying v dd = 3.0 v to the sensor until the output is valid. t pon 80 150 sv dd =3v,b b rp -0.5mtor b b op +0.5mt chopper frequency 1) f osc 350 khz
TLE4964-2M specification data sheet 15 revision 1.0, 2012-07-20 field directio n definition positive magnetic fields are defi ned with the south pole of the magne t to the branded side of package. figure 3-3 definition of magnetic field direction pg-sot23-3-15 table 3-5 magnetic characteristics parameter symbol t (c) values unit note / test condition min. typ. max. operating point b op -40 21.6 30.2 38.8 mt 25 20.0 28.0 36.0 170 16.3 23.1 29.9 release point b rp -40 17.1 24.2 31.2 mt 25 15.9 22.5 29.1 170 12.9 18.6 24.3 hysteresis b hys -40 4.4 5.9 8.0 mt 25 4.1 5.5 7.5 170 3.4 4.6 6.3 effective noise value of the magnetic switching points 1) 1) the magnetic noise is normal distributed and can be assu med as nearly independent to frequency without sampling noise or digital noise effects. the typical value represen ts a the rms-value and corresponds therefore to a 1 v probability of normal distribution. consequently a 3 v value corresponds to 99.7% probability of appearance. b neff 25 62 p t temperature compensation of magnetic thresholds 2) 2) not subject to production test, ve rified by design/characterization. t c -1200 ppm/k branded side n s
TLE4964-2M specification data sheet 16 revision 1.0, 2012-07-20 3.5 electro magnetic compatibility characterization of electro magnetic compatibility is carr ied out on a sample basis from one qualification lot. not all specification parameters have been monitored during emc exposure. figure 3-4 emc test circuit ref: iso 7637-2 (version 2004), test circuit figure 3.4 (with external resistor, r s = 100 ? ) ref: iso 7637-2 (version 2004), test circuit figure 3.4 (without external resistor, r s = 0 ? ) table 3-6 magnetic compatibility parameter symbol level / type status testpulse 1 testpulse 2a 1) testpulse 2b testpulse 3a testpulse 3b testpulse 4 2) testpulse 5b 3) 1) iso 7637-2 (2004) describes internal resistance = 2 ? (former 10 ? ). 2) according to 7637-2 for test pulse 4 the test voltage shall be 12 v +/- 0.2 v. 3) a central load dump protection of 42 v is used. us* = 42 v-13.5 v. v emc -100 v 60 v/110 v 10 v -150 v 100 v -7 v / -5.5 v u s = 86.5 v / u s * = 28.5 v c a/c c a a a a table 3-7 electro magnetic compatibility parameter symbol level / type status testpulse 1 testpulse 2a 1) testpulse 2b testpulse 3a testpulse 3b testpulse 4 2) testpulse 5b 3) 1) iso 7637-2 (2004) describes internal resistance = 2 ? (former 10 ? ). 2) according to 7637-2 for test pulse 4 the test voltage shall be 12 v +/- 0.2 v. 3) a central load dump protection of 42 v is used. us* = 42 v-13.5 v. v emc -50 v 50 v 10 v -150 v 100 v -7 v / 5.5 v u s = 86.5 v / u s * = 28.5 v c a c a a a a tle496x gnd vs r q = 1. 2k : c dd = 10nf r s v dd q c q = 10nf +5v
TLE4964-2M package information data sheet 17 revision 1.0, 2012-07-20 4 package information the TLE4964-2M is available in the small halogen free smd package pg-sot23-3-15. 4.1 package outline pg-sot23-3-15 figure 4-1 pg-sot23-3-15 package outline (all dimensions in mm) 4.2 packing information pg-sot23-3-15 figure 4-2 packing of the pg-sot23-3-15 in a tape 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0. . . 8 0.2 a 0.1 max. 10 max. 0 . 0 8 . . . 0 . 1 5 1.3 0.1 10 max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 sot23-tp v02 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1
TLE4964-2M package information data sheet 18 revision 1.0, 2012-07-20 4.3 footprint pg-sc59- 3-5 and pg-sot23-3-15 figure 4-3 footprint pg-sc59-3-5 and pg-sot23-3-15 4.4 pg-sot23-3-15 distance between chip and package figure 4-4 distance between chip and package 4.5 package marking figure 4-5 marking of TLE4964-2M reflow soldering wave soldering 0.8 0.8 1.2 0. 9 1. 3 0.9 0.8 0.8 1.2 1. 6 1. 4 min 1. 4 min year (y) = 0...9 month ( m) = 1...9 , o-october n-november d-december y m m42
TLE4964-2M graphs of the magnetic parameters data sheet 19 revision 1.0, 2012-07-20 5 graphs of the magnetic parameters figure 5-1 operating point (b op ) of the TLE4964-2M over temperature figure 5-2 release point (b rp ) of the TLE4964-2M over temperature figure 5-3 hysteresis (b hys ) of the TLE4964-2M over temperature 15 20 25 30 35 40 45 b op [m t ] typ min 0 5 10 50,00 0,00 50,00 100,00 150,00 t a [c] max 10 15 20 25 30 35 b rp [m t ] typ min 0 5 10 50,00 0,00 50,00 100,00 150,00 t a [c] max 3 4 5 6 7 8 9 b hys [m t ] typ min 0 1 2 50,00 0,00 50,00 100,00 150,00 t a [c] max
TLE4964-2M graphs of the electrical parameters data sheet 20 revision 1.0, 2012-07-20 6 graphs of the electrical parameters figure 6-1 power on time t pon of the TLE4964-2M over temperature figure 6-2 signal delay time of the TLE4964-2M over temperature 60 65 70 75 80 t pon _max [s] 3v 50 55 60 50 30 10 10 30 50 70 90 110 130 150 t[c] 14 14,5 15 15,5 t d [s] 3v 12v 12,5 13 13,5 -50 -30 -10 10 30 50 70 90 110 130 150 t [c]
TLE4964-2M graphs of the electrical parameters data sheet 21 revision 1.0, 2012-07-20 figure 6-3 supply current of the TLE4964-2M over temperature figure 6-4 supply current of the TLE4964-2M over supply voltage 1,4 1,5 1,6 1,7 1,8 1,9 2 i s [ma] vs=3v vs=12v vs=32v 1 1,1 1,2 1,3 -50 -30 -10 10 30 50 70 90 110 130 150 t [c] vs=42v 1,4 1,5 1,6 1,7 1,8 1,9 2 i s [ma] -40c 25c 150c 1 1,1 1,2 1,3 0 5 10 15 20 25 30 35 40 45 v s [v]
TLE4964-2M graphs of the electrical parameters data sheet 22 revision 1.0, 2012-07-20 figure 6-5 output current limit of the TLE4964-2M over temperature figure 6-6 output current limit of the tle 4964-2m over applied pull-up voltage figure 6-7 output fall time of the TLE4964-2M over temperature 57,0 58,0 59,0 60,0 61,0 62,0 63,0 i qlimit [ma] 5v 12v 32v 54,0 55,0 56,0 5030101030507090110130150 t[c] 57,0 58,0 59,0 60,0 61,0 62,0 63,0 i qlimit [ma] 40 c 25 c 150 c 54,0 55,0 56,0 0 5 10 15 20 25 30 35 v q [v] 400 500 600 700 t f [n s ] 3v 12v 100 200 300 -50-30-101030507090110130150 t [c] 32v
TLE4964-2M graphs of the electrical parameters data sheet 23 revision 1.0, 2012-07-20 figure 6-8 output fall time of the TLE4964-2M over applied pull-up voltage figure 6-9 output rise time of the TLE4964-2M over temperature figure 6-10 output rise time of the TLE4964-2M over applied pull-up voltage 400 500 600 700 t f [n s ] -40c 25c 100 200 300 0 5 10 15 20 25 30 35 v q [v] 150c 500 600 700 t r [n s ] 3v 12v 300 400 -50 -30 -10 10 30 50 70 90 110 130 150 t [c] 32v 400 500 600 700 t f [n s ] -40c 25c 100 200 300 0 5 10 15 20 25 30 35 v q [v] 150c
TLE4964-2M graphs of the electrical parameters data sheet 24 revision 1.0, 2012-07-20 figure 6-11 output leakage current of the TLE4964-2M over temperature figure 6-12 saturation voltage of the TLE4964-2M over temperature figure 6-13 saturation voltage of the TLE4964-2M over output current 0,1 1 10 i qleak [a] 32v 0,001 0,01 80 90 100 110 120 130 140 150 160 170 180 i t [c] 150 200 250 300 350 400 v qsat [mv] 10ma 15ma 20ma 0 50 100 -50 -30 -10 10 30 50 70 90 110 130 150 t [c] 25ma 150 200 250 300 350 400 v qsat [mv] -40c 25c 150c 0 50 100 8 101214161820222426 i q [ma]
TLE4964-2M graphs of the electrical parameters data sheet 25 revision 1.0, 2012-07-20 figure 6-14 effective noise of the TLE4964-2M thresholds over temperature figure 6-15 output signal jitter of the TLE4964-2M over temperature 60 70 80 90 100 110 120 n eff [t(rms)] 12v 20 30 40 50 -50 -30 -10 10 30 50 70 90 110 130 150 b n t [c] 03 0,4 0,5 0,6 0,7 0,8 t qj [s(rms)] 12v 0 0,1 0,2 0 , 3 -50-30-101030507090110130150 t t [c]
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